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Lateral Aligment of Epitaxial Quantum Dots
Accurate positioning of self-organized nanostructures on a substrate surface can be regarded as the Achilles heel of nanotechnology. This perception also applies to self-assembled semiconductor quantum dots. This book describes the full range of possible strategies to laterally align self-assembled...
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| Auteur principal : | |
|---|---|
| Format : | Livre |
| Langue : | anglais |
| Titre complet : | Lateral Aligment of Epitaxial Quantum Dots / by Oliver Schmidt. |
| Publié : |
Berlin, Heidelberg :
Springer Berlin Heidelberg
, [20..] Cham : Springer e-books Springer Nature |
| Collection : | Nanoscience and technology |
| Titre de l'ensemble : | Nano Science and Technolgy |
| Accès en ligne : |
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| Contenu : | Lateral Self-Alignment. Physical Mechanisms of Self-Organized Formation of Quantum Dots. Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001). Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions. Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes. Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth the SiGe/Si System. Ge Quantum Dot Self-Alignment on Vicinal Substrates. Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed SixGe1?x Buffer Layer. Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs (110) Cleavage Planes. Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures. Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering. Towards Quantum Dot Crystals via Multilayer Stacking on Different Indexed Surfaces. Forced Alignment. One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates. Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications. Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation. Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates. Metallization and Oxidation Templating of Surfaces for Directed Island Assembly. Site Control and Selective-Area Growth Techniques of In As Quantum Dots with High Density and High Uniformity. In(Ga)As Quantum Dot Crystals on Patterned GaAs(001) Substrates. Directed Arrangement of Ge Quantum Dots on Si Mesas by Selective Epitaxial Growth. Directed Self-Assembly of Quantum Dots by Local-Chemical-Potential Control via Strain Engineering on Patterned Substrates. Structural and Luminescence Properties of Ordered Ge Islands on Patterned Substrates. Formation of Si and Ge Nanostructures at Given Positions by Using Surface Microscopy and Ultrathin SiO2 Film Technology. Pyramidal Quantum Dots Grown by Organometallic Chemical Vapor Deposition on Patterned Substrates. Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks. GaAs and InGaAs Position-Controlled Quantum Dots Fabricated by Selective-Area Metalloorganic Vapor Phase Epitaxy. Spatial InAs Quantum Dot Positioning in GaAs Microdisk and Posts |
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| Documents associés : | Autre format:
Lateral alignment of epitaxial quantum dots |