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Gettering defects in semiconductors
Gettering Defects in Semiconductors fulfills three basic purposes: to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; to identify new directions in research, particularly to enhance the perspective of professionals and young...
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| Auteurs principaux : | , |
|---|---|
| Format : | Livre |
| Langue : | anglais |
| Titre complet : | Gettering defects in semiconductors / by Victor A. Perevoschikov, Vladimir D. Skoupov |
| Édition : | 1st ed. 2005. |
| Publié : |
Berlin, Heidelberg :
Springer Berlin Heidelberg
, [20..] Cham : Springer Nature |
| Collection : | Springer series in advanced microelectronics (Internet) ; 19 |
| Accès en ligne : |
Accès Nantes Université
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| Note sur l'URL : | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex |
| Condition d'utilisation et de reproduction : | Conditions particulières de réutilisation pour les bénéficiaires des licences nationales : https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 |
| Contenu : | Basic technological processes and defect formation in the components of device structures. Effects of defects on electrophysical and functional parameters in semiconducting structures and devices. Techniques for high-temperature gettering. Physical foundations for low-temperature gettering techniques |
| Sujets : | |
| Documents associés : | Autre format:
Gettering defects in semiconductors Autre format: Gettering Defects in Semiconductors Autre format: Gettering Defects in Semiconductors Autre format: Gettering defects in semiconductors |
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| 200 | 1 | |a Gettering defects in semiconductors |f by Victor A. Perevoschikov, Vladimir D. Skoupov | |
| 205 | |a 1st ed. 2005. | ||
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| 327 | 1 | |a Basic technological processes and defect formation in the components of device structures |a Effects of defects on electrophysical and functional parameters in semiconducting structures and devices |a Techniques for high-temperature gettering |a Physical foundations for low-temperature gettering techniques | |
| 330 | |a Gettering Defects in Semiconductors fulfills three basic purposes: to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading | ||
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