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CCD image sensors in deep-ultraviolet : degradation behavior and damage mechanisms
As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspe...
| Auteurs principaux : | , |
|---|---|
| Format : | Livre |
| Langue : | anglais |
| Titre complet : | CCD image sensors in deep-ultraviolet : degradation behavior and damage mechanisms / by Flora M. Li, Arokia Nathan |
| Édition : | 1st ed. 2005. |
| Publié : |
Berlin, Heidelberg :
Springer Berlin Heidelberg
, [20..] Cham : Springer Nature |
| Collection : | Microtechnology and MEMS (Internet) |
| Accès en ligne : |
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| Condition d'utilisation et de reproduction : | Conditions particulières de réutilisation pour les bénéficiaires des licences nationales : https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 |
| Contenu : | Overview of CCD. CCD Imaging in the Ultraviolet (UV) Regime. Silicon. Silicon Dioxide. Si-SiO2 Interface. General Effects of Radiation. Effects of Radiation on CCDs. UV-Induced Effects in Si. UV Laser Induced Effects in SiO2. UV Laser Induced Effects at the Si-SiO2 Interface. CCD Measurements at 157nm. Design Optimizations for Future Research. Concluding Remarks |
| Sujets : | |
| Documents associés : | Autre format:
CCD image sensors in deep-ultraviolet |
| LEADER | 04173clm a2200685 4500 | ||
|---|---|---|---|
| 001 | PPN123086825 | ||
| 003 | http://www.sudoc.fr/123086825 | ||
| 005 | 20241002160000.0 | ||
| 010 | |a 978-3-540-27412-4 | ||
| 017 | 7 | 0 | |a 10.1007/b139047 |2 DOI |
| 035 | |a (OCoLC)647110724 | ||
| 035 | |a Springer978-3-540-27412-4 | ||
| 035 | |a SPRINGER_EBOOKS_LN_PLURI_10.1007/b139047 | ||
| 035 | |a Springer-11644-978-3-540-27412-4 | ||
| 100 | |a 20080409f20 u y0frey0103 ba | ||
| 101 | 0 | |a eng |2 639-2 | |
| 102 | |a DE | ||
| 135 | |a dr||||||||||| | ||
| 181 | |6 z01 |c txt |2 rdacontent | ||
| 181 | 1 | |6 z01 |a i# |b xxxe## | |
| 182 | |6 z01 |c c |2 rdamedia | ||
| 182 | 1 | |6 z01 |a b | |
| 183 | |6 z01 |a ceb |2 RDAfrCarrier | ||
| 200 | 1 | |a CCD image sensors in deep-ultraviolet |e degradation behavior and damage mechanisms |f by Flora M. Li, Arokia Nathan | |
| 205 | |a 1st ed. 2005. | ||
| 214 | 0 | |a Berlin, Heidelberg |c Springer Berlin Heidelberg | |
| 214 | 2 | |a Cham |c Springer Nature |d [20..] | |
| 225 | 0 | |a Microtechnology and MEMS |x 2365-0680 | |
| 327 | 1 | |a Overview of CCD |a CCD Imaging in the Ultraviolet (UV) Regime |a Silicon |a Silicon Dioxide |a Si-SiO2 Interface |a General Effects of Radiation |a Effects of Radiation on CCDs |a UV-Induced Effects in Si |a UV Laser Induced Effects in SiO2 |a UV Laser Induced Effects at the Si-SiO2 Interface |a CCD Measurements at 157nm |a Design Optimizations for Future Research |a Concluding Remarks | |
| 330 | |a As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths | ||
| 371 | 0 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | |
| 371 | 0 | |a Accès soumis à abonnement pour tout autre établissement | |
| 371 | 1 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales |c https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | |
| 410 | | | |0 187674892 |t Microtechnology and MEMS (Internet) |x 2365-0680 | |
| 452 | | | |0 261751220 |t CCD image sensors in deep-ultraviolet |o degradation behavior and damage mechanisms with 84 figures |f F.M. Li, A. Nathan |d 2005 |c Berlin |n Springer |p 1 vol. (XI-231 p.) |s Microtechnology and MEMS |y 3-540-22680-X | |
| 610 | 1 | |a Chemistry | |
| 610 | 2 | |a Optical Spectroscopy, Ultrafast Optics | |
| 610 | 2 | |a Physics and Applied Physics in Engineering | |
| 610 | 2 | |a Optical and Electronic Materials | |
| 610 | 2 | |a Electronics and Microelectronics, Instrumentation | |
| 610 | 2 | |a Engineering, general | |
| 610 | 2 | |a Optics, Lasers, Photonics, Optical Devices | |
| 615 | |a @Chemistry and Materials Science |n 11644; ZDB-2-CMS |2 Springer | ||
| 615 | |a Chemistry and Materials Science |n 11644 |2 Springer | ||
| 676 | |a 620.11295 |v 23 | ||
| 676 | |a 620.11297 |v 23 | ||
| 680 | |a TA1750-1750.22 | ||
| 700 | 1 | |3 PPN15514653X |a Li |b Flora M. |4 070 | |
| 701 | 1 | |3 PPN090309286 |a Nathan |b Arokia |f 1957- |4 070 | |
| 801 | 3 | |a FR |b Abes |c 20240910 |g AFNOR | |
| 801 | 1 | |a DE |b Springer |c 20210914 |g AACR2 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/b139047 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-LQPXHCSN-N |z Accès sur la plateforme Istex | |
| 856 | 4 | |5 441099901:830928944 |u https://budistant.univ-nantes.fr/login?url=https://doi.org/10.1007/b139047 | |
| 915 | |5 441099901:830928944 |b SPRING4-00248 | ||
| 930 | |5 441099901:830928944 |b 441099901 |j g | ||
| 979 | |a NUM | ||
| 991 | |5 441099901:830928944 |a Exemplaire créé en masse par ITEM le 01-10-2024 15:46 | ||
| 997 | |a NUM |b SPRING4-00248 |d NUMpivo |e EM |s d | ||
| 998 | |a 980096 | ||