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Silicon Quantum Integrated Circuits : Silicon-Germanium Heterostructure Devices: Basics and Realisations
Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mi...
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| Auteurs principaux : | , |
|---|---|
| Format : | Livre |
| Langue : | anglais |
| Titre complet : | Silicon Quantum Integrated Circuits : Silicon-Germanium Heterostructure Devices: Basics and Realisations / by Erich Kasper, D.J. Paul. |
| Édition : | 1st ed. 2005. |
| Publié : |
Berlin, Heidelberg :
Springer Berlin Heidelberg
, [20..] Cham : Springer Nature |
| Collection : | Nanoscience and technology (Internet) |
| Accès en ligne : |
Accès Nantes Université
Accès direct soit depuis les campus via le réseau ou le wifi eduroam soit à distance avec un compte @etu.univ-nantes.fr ou @univ-nantes.fr |
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| Condition d'utilisation et de reproduction : | Conditions particulières de réutilisation pour les bénéficiaires des licences nationales : https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 |
| Contenu : | Material Science. Resumé of Semiconductor Physics. Realisation of Potential Barriers. Electronic Device Principles. Heterostructure Bipolar Transistors - HBTs. Hetero Field Effect Transistors (HFETs). Tunneling Phenomena. Optoelectronics. Integration. Outlook |
| Sujets : | |
| Documents associés : | Autre format:
Silicon quantum integrated circuits Autre format: Silicon Quantum Integrated Circuits Autre format: Silicon Quantum Integrated Circuits Autre format: Silicon quantum integrated circuits |
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| 330 | |a Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics | ||
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