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20171020102300.0 |
| 010 |
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|a 3-540-67702-X
|b rel.
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|a 20040507h20032003k y0frey0103 ba
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0 |
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|a eng
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|a US
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| 105 |
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|a a z 001yy
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| 106 |
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|a r
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| 200 |
1 |
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|a High-frequency bipolar transistors
|b Texte imprimé
|e physics, modeling, applications
|f M. Reisch
|
| 210 |
|
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|a Berlin
|a Heidelberg
|a New-York
|c Springer
|d 2003
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| 215 |
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|a XX-658 p.
|c ill.
|d 24 cm
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| 225 |
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|a Springer series in advanced microelectronics
|v 11
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| 320 |
|
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|a Réf. bibliogr. en fin de chap. Index
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| 410 |
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| |
|t Springer series in advanced microelectronics
|v 11
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| 606 |
|
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|3 PPN027885798
|a Transistors bipolaires
|2 rameau
|
| 700 |
|
1 |
|3 PPN077906624
|a Reisch
|b Michael
|4 070
|
| 801 |
|
3 |
|a FR
|b Abes
|c 20040507
|g AFNOR
|
| 930 |
|
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|5 441092104:202238989
|b 441092104
|a 621.382 REI
|j u
|
| 979 |
|
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|a SCI
|
| 998 |
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|a 28038
|
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